1. product profile 1.1 general description 100 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 2500 mhz to 2700 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on ccdf per carrier; 5 mhz carrier spacing. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? decoupling leads to enable improved video bandwidth (110 mhz typical) ? designed for broadband operation (2500 mhz to 2700 mhz) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for base stations and multi carrier a pplications in the 2500 mhz to 2700 mhz frequency range blf8g27ls-100v; BLF8G27LS-100GV power ldmos transistor rev. 4 ? 26 september 2013 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2500 to 2700 900 28 25 17 28 ? 32 [1]
blf8g27ls-100v_27ls-100gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 26 september 2013 2 of 14 nxp semiconductors blf8g27ls-100(g)v power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol blf8g27ls-100v (sot1244b) 1d r a i n 2g a t e 3s o u r c e [1] 4 decoupling lead 5 decoupling lead 6n . c . 7n . c . BLF8G27LS-100GV (sot1244c) 1d r a i n 2g a t e 3s o u r c e [1] 4 decoupling lead 5 decoupling lead 6n . c . 7n . c . d d d d d d table 3. ordering information type number package name description version blf8g27ls-100v - earless flanged ceramic package; 6 leads sot1244b BLF8G27LS-100GV - earless flanged ceramic package; 6 leads sot1244c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 225 ?c
blf8g27ls-100v_27ls-100gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 26 september 2013 3 of 14 nxp semiconductors blf8g27ls-100(g)v power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf8g27ls-100v and BLF8G27LS-100GV are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28 v; i dq =900ma; p l = 100 w; f = 2500 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 48 w 0.292 k/w table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 153 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 4.2 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -29-a i gss gate leakage current v gs =11v; v ds = 0 v - - 420 na g fs forward transconductance v ds =10v; i d =153ma - 1.27 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =5.35a -0.1- ? table 7. rf characteristics test signal: 2-carrier w-cdma, 3gpp test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on the ccdf; f 1 = 2502.5 mhz; f 2 = 2507.5 mhz; f 3 = 2692.5 mhz; f 4 = 2697.5 mhz; rf performance at v ds =28v; i dq = 900 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) =25w 15.8 17 - db ? d drain efficiency p l(av) =25w 25 28 - % rl in input return loss p l(av) =25w - ? 10 - db acpr 5m adjacent channel power ratio (5 mhz) p l(av) =25w - ? 32 ? 26 dbc
blf8g27ls-100v_27ls-100gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 26 september 2013 4 of 14 nxp semiconductors blf8g27ls-100(g)v power ldmos transistor 7.2 impedance information [1] z s and z l defined in figure 1 . 7.3 vbw in class-ab operation the blf8g27ls-100v and BLF8G27LS-100GV show 110 mhz (typical) video bandwidth in class-ab test circuit in 2.6 ghz band at v ds = 28 v and i dq = 0.9 a. table 8. typical impedance measured load-pull data; i dq = 900 ma; v ds = 28 v (main transistor). f z s [1] z l [1] (mhz) (? ) (? ) blf8g27ls-100v 2500 1.2 ? j4.6 2.7 ? j2.7 2600 2.3 ? j5.5 2.5 ? j2.5 2700 3.8 ? j5.2 2.1 ? j2.6 BLF8G27LS-100GV 2500 1.7 ? j7.4 2.4 ? j4.9 2600 2.8 ? j8.0 2.2 ? j5.2 2700 4.0 ? j7.9 2.0 ? j5.3 fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h
blf8g27ls-100v_27ls-100gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 26 september 2013 5 of 14 nxp semiconductors blf8g27ls-100(g)v power ldmos transistor 7.4 test circuit printed-circuit board (pcb): rogers ro4350b; ? r = 3.5; thickness = 0.762 mm. see table 9 for list of components. fig 2. component layout for test circuit table 9. list of components for test circuit, see figure 2 . component description value remarks c1, c2, c9 multilayer cerami c chip capacitor 20 pf atc600f c3, c4, c6, c8 multilayer ceramic chip capacitor 10 ? fmurata c5, c7 multilayer cera mic chip capacitor 0.1 ? fmurata c10, c11 electrolytic capacitor 1000 ? f, 1 0 0 v r1, r2 chip resistor 9.1 ? vishay dale smd 0805 d d d & |